Irf9530n

Fifth Generation HEXFETs from International Rectifier utilize advanced processing. Id=-14A), alldatasheet, datasheet. Parameters and Characteristics.

Electronic Component Catalog. Datasheet (data sheet) search for. Continuous Drain Current (ID), A. Gate to Source Voltage (Vgs), V.

Max Operating Temperature, 1°C. Min Operating Temperature, -°C. Více informací - viz odpovídající datové listy.

Uds: 1V, Idss: A, Pd: W, Rds: Ohm Unipolární tranzistor P-Kanál, Provedení: Vývodové, Idss = A, Vds = 1V, Pd = W, Rds = Ohm. The product is already in the wishlist! Category: OTHER SEMICONDUCTORS.

Available schematic symbol, footprint and datasheet specification. Transistor Polarity: P Channel. Manufactured by International Rectifier,RoHS Compliant Part, Supplied in bulk.

Maar de mosfet gaat geleiden en reageert vrijwel niet op het 5v signaal. Основные характеристики транзистора. Pin to Pin Replacement - Match Corps, functional and electrical characteristics. Check stock and pricing, order online, buy now, view product specifications.

R$já com 15% de Desconto no Boleto. Power MOSFET(Vdss -100V, Rds(on) 0. This datasheet is subject to change without notice. For technical questions, contact.

Ich habe ein kleines Problem wo ich nicht weiterkomme. Basis meiner Schaltung ist ein Arduino mit dem ATmega328P-AU auf 5V. Ohm, ID = -14A from International Rectifier datasheet. Seller: omgaudobahn (235) 99.

Podstawowe parametry to 14A 100V 2Ω P-MOSFET TO220. HEXFETs利用先进的加工技术，以实现极低的导通电阻每硅片面积。这益处，结合快速开关速度和坚固耐用.

Cadsoft EAGLE CAD libraries to reduces the efforts and time put into by our EDE customer in PCB design.