Mmbf170

Ordering Information (Note 4). N - Channel Enhancement Mode Field Effect Transistor. This device features high cell density.

N-Channel Enhancement Mode Field Effect Transistor. Check stock and pricing, view product specifications, and order online. OFF CHARACTERISTICS (Note 3). Drain-Source Breakdown Voltage.

Its maximum power dissipation is 3mW. MMBF17 the BS1FET in SOT23-case. TA = 25°C unless otherwise noted.

N沟道增强模式场效应晶体管采用飞兆专有的高单元密度DMOS技术生产。 这款产品旨在最大限度地降低导通阻抗，同时. N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features. Do you advice "logic level" FETs for LEDs and commands, for one of the two.

MOSFET N-CH 60V 500MA SOT-2. Roads (miles) Permanent 210. What voltage and what current is to be switched?

Sale Plan (less 15%) 22222(Ill-Yr. Plan Volume MMBF) (170) (170) (170) (170) (170) Remaining. TAPE and REEL OPTION FSCINT. The spec sheets for them will often have the alternate SMD name in them.

Preise habe ich nicht geprüft. Y BZV49-C6V Phi, O, SOT8 6. Y BZV49-C6V Phi, O, SOT8 6. Signal flow is from left to right, AMP_end. Eur: Jap: Usa: Rus: =MA 37 HFE: Pc: Ic: Ft: CC:0.

TJ: Caixa Pinos 6Z, Pinos-Pinout 6Z. De uitgangen zijn geconfigureerd op "totem pole". TX Digispark version: What do you need? ELECTRONICS, VFCin DIP-package or equivalent, 20.

Marking, Category, Type, Conventional equivalent. Thermal Resistance, Junction to Ambient. All Surface-Mount Flash Memory VPP.